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atomic layer deposition
Atomic layer deposition (ALD) is a thin film deposition technique that is based on the sequential use of a gas phase chemical process. The majority of ALD reactions use two chemicals, typically called precursors. These precursors react with the surface of a material one at a time in a sequential, self-limiting, manner. Through the repeated exposure to separate precursors, a thin film is slowly deposited.
==Introduction==
Atomic Layer Deposition (ALD) is a thin film deposition method in which a film is grown on a substrate by exposing its surface to
alternate gaseous species (typically referred to as precursors). In contrast to ''chemical vapor deposition'', the precursors are never present simultaneously in the reactor, but they are inserted as a series of sequential, non-overlapping pulses. In each of these pulses the precursor molecules react with the surface in a self-limiting way, so that the reaction terminates once all the reactive sites on the surface are consumed. Consequently, the maximum amount of material deposited on the surface after a single exposure to all of the precursors (a so-called ALD cycle) is determined by the nature of the precursor-surface interaction.〔Puurunen, Riikka. Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process, Journal of Applied Physics 97 , 121301 (2005)〕 By varying the number of cycles it is possible to grow materials uniformly and with high precision on arbitrarily complex and large substrates.
ALD is an active field of research, with hundreds of different processes published in the scientific literature, though some of them exhibit behaviors that depart from that of an ideal ALD process.〔
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